A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.
Tom's Hardware on MSN2d
Chinese university designed 'world's first silicon-free 2D GAAFET transistor,' claims new bismuth-based tech is both the fastest and lowest-power transistor yetPeking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...
i.e., gate-all-around (GAA) nanosheet FET at the ultimate nanosheet thickness, using 2-D materials (2DMs). In particular, our numerical study specifically explores the potential of multilayer ...
Although GAA transistors have yet to ship ... At IEDM, Intel described various 2D FETs including a nanoribbon FET with 5nm gate length. In another example, Intel described a PMOS device using a WSe 2 ...
While conducting their study, they discovered that 2D materials can also be uniquely engineered to create an entirely new transistor architecture, which they dubbed nano-plate FET (NPFET).
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback