GAA FETs provides greater performance at lower power than finFETs, but they are more expensive to design and fabricate. Fig. 1: Planar transistors vs. finFETs vs. gate-all-around. Source: Lam Research ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

Fin field-effect transistor, or FinFET, is used from 16/14 nm onward. After FinFET comes gate all around, or GAA, which will be adopted on TSMC's 2 nm and Samsung's 3 nm nodes. Successive ...

The 16nm FinFET node has introduced several new challenges in the IC design community. In addition to the complexity of power-noise and electromigration (EM) verification, thermal reliability has ...

is sticking to the FinFET architecture. If Samsung fails to introduce Exynos 2500 to the Galaxy S25 series, it might bemoan the GAA upgrade. That said, the Korean tech titan still has 3-4 months ...

Achieving system-on-chip (SoC) timing closure is a major obstacle in the FinFET era. Even though designers can now use faster transistors that consume and leak less power than before, FinFET ...

FinFETs form the foundation for many of today’s semiconductor fabrication techniques but also create significant design concerns that affect your layout. Understanding the changes and design ...