Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.

Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” ...

Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia ...

Since the discovery of graphene in 2004, research over the past two decades has advanced the use of 2D materials in semiconductor manufacturing, with academia playing a crucial role in driving ...

While GeSi has been used and studied for decades as a material system in applications like transistors in semiconductor physics ... When we look at the atomic structure of ‘hexagonal GeSi’, the atoms ...

Crucial to the fabrication of a high-performance device is an ohmic contact, realised with a quasi-vertical structure featuring a heavily-doped AlGaN layer as the contact layer. To assess the impact ...