Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.

Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

The structure of the fabricated bottom-gate top-contact (BGTC) OFETs is shown in Figure 1B. The channel length (L) and width (W) of each transistor were 30 and 1,000 μm, respectively. The electrical ...

Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia ...

Since the discovery of graphene in 2004, research over the past two decades has advanced the use of 2D materials in semiconductor manufacturing, with academia playing a crucial role in driving ...

While GeSi has been used and studied for decades as a material system in applications like transistors in semiconductor physics ... When we look at the atomic structure of ‘hexagonal GeSi’, the atoms ...

Crucial to the fabrication of a high-performance device is an ohmic contact, realised with a quasi-vertical structure featuring a heavily-doped AlGaN layer as the contact layer. To assess the impact ...

Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States ...

Gate-all-around is different than finFETs. “Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling,” ...

A SiC power MOSFET is a power switching transistor. A diode is a device that passes electricity ... But you are changing the fundamental structure between every customer.” All told, the IDM model ...