EDN22h
DRAM basics and its quest for thermal stability by optimizing peripheral transistors
In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...
Semiconductor Engineering1d
Modeling and Simulation of NVM Technologies: Tutorial (TU Dormand, TU Dresden, KIT, FAU)
A new technical paper titled “Modeling and Simulating Emerging Memory Technologies: A Tutorial” was published by researchers ...
Frontiers14d
Towards sustainable, solution-processed organic field-effect transistors using cashew gum as the gate dielectric
The structure of the fabricated bottom-gate top-contact (BGTC) OFETs is shown in Figure 1B. The channel length (L) and width (W) of each transistor were 30 and 1,000 μm, respectively. The electrical ...
C&EN16d
Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array
Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia ...
Digi Times26d
From graphene to next-gen materials, the upcoming 2D FET
Since the discovery of graphene in 2004, research over the past two decades has advanced the use of 2D materials in semiconductor manufacturing, with academia playing a crucial role in driving ...
C&EN29d
Characterization and Modeling of Interfacial Photogating Effect in Graphene Field-Effect Transistor Photodetectors on Silicon
Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States ...
Design-Reuse2y
A Review Paper on CMOS, SOI and FinFET Technology
We discuss new device structures: SOI and FinFET which replaced planner bulk transistor. Here, we first discuss the basic structure, operation and important terms related to the core unit of CMOS i.e.
Semiconductor Engineering4y
New Transistor Structures At 3nm/2nm
Gate-all-around is different than finFETs. “Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling,” ...