Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging ...

The TSC family has been designed to help customers achieve excellent robustness with maximum power density and system efficiency at low cost. It also enables direct heat dissipation of 95 percent, ...

SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

Abstract: The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates ...

Abstract: Series-connection of silicon carbide (SiC)-MOSFETs has significant advantages in simplifying the topology and control of high-voltage converters. However, the challenges of high isolation ...

have delivered a dramatic improvement in the performance of vertical GaN MOSFETs through the introduction of a HfO 2 gate dielectric. Team spokesman, Andrew Binder, told Compound Semiconductor that ...

These MOSFETs deliver low switching and conduction losses, low capacitance, and enhanced reliability through a durable gate oxide. Each component undergoes wafer-level burn-in (WLBI) to filter out ...