But when the task at hand is growing oxide layers on silicon chips in preparation for making your own integrated circuits, it turns out that the old Mark 1 eyeball is all you need. Alert readers ...

Numerous defects at the fragile silicon oxide/c-Si interface and the weak field-effect passivation on textured substrates reduce the V OC s of current TOPCon silicon solar cells, thus limiting ...

Ditching traditional silicon, commonplace for conventional processors and compute devices, this RISC-V-based microprocessor ...

The physical gate-oxide thickness was scaled from about ... Compared with state-of-the-art silicon transistors, these III–V transistors show either a 1.5-fold improvement in intrinsic speed ...

Researchers at the Chinese Academy of Sciences have successfully created foldable crystalline silicon (c-Si ... for 3 min to etch the surface oxide.” The academics used the wafers to produce ...