Feb 14, 2025 · At foreseeable ångström nodes, a gate-all-around (GAA) field-effect transistor based on two-dimensional (2D) semiconductors would provide excellent electrostatic gate controllability to...

Abstract: CFETs based on 2D materials hold the potential to replace Si as a channel at advanced technology nodes. In this work, gate-all-around (GAA) nanosheet FETs with the monolayer MoS $\mathbf{M}_{2}$ channels are presented.

Apr 29, 2024 · Here we report a ledge-guided epitaxy strategy for growing high-density, mono-oriented 2D Bi 2 O 2 Se fin arrays that can be used to fabricate integrated 2D multi-fin field-effect transistors....

Nov 25, 2021 · In this Review, we explore the development of 2D FETs for future integrated circuits. We first consider the large-area growth of 2D channel materials and the fabrication of a 2D FET, as...

We report record performance in GAA 2D NMOS transistors using monolayer MoS 2 with three advances: scaled gate length (Lg) down to 25nm, scaled contact length (Lc) of 38nm, and the elimination of the low-k “inter-layer” in the gate stack enabling the first fully high-k GAA 2D device.

We focus on the fabrication of Gate-All-Around (GAA) 2D NMOS and PMOS transistors with scaled gate length (Lg, =S-to-D distance) down to 30nm and specific focus on gate oxide (GOx) module development.

3 days ago · The 2D GAAFET architecture circumvents the mobility degradation that plagues silicon in ultra-small geometries, allowing for continued performance scaling beyond current nodes. The development comes during China's intensified efforts to achieve semiconductor self-sufficiency, as trade restrictions have limited access to advanced lithography ...

mobility channel enablement. 2D material FET provides the ultimate gate l ength scaling with high mobility channel capability. In this short course, we will focus on the status of these innovations with the corresponding engineering opportunities and challenges for high volume manufacturing.

3 days ago · The Peking team has fabricated what the paper describes as a "wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration." "It is the fastest, most efficient transistor ever," said ...

Gate-all-around FET (GAA FET) is a modified transistor structure where the gate contacts the channel from all sides. It’s basically a silicon nanowire with a gate going around it. In some cases, the gate-all-around FET could have InGaAs or other III-V materials in the channels.