Nov 13, 2014 · Surface charging, often leading to physical damage by Electro-Static Discharge (ESD), is one of the detrimental factors impacting outcome of semiconductor device modifications and limiting...

Sep 10, 2020 · Further, we show that dopant deactivation is caused by defect diffusion during milling and is not directly impacted by the presence of Gallium in the sample. Later, we also discuss potential...

Sep 6, 2022 · In this paper we shall review the root cause analysis of electrostatic discharge (ESD) defect formation and defect characterization in AlGaN/GaN HEMT wafers.

FIB cross-section of the shorted capacitor confirmed ESD damage (Figure 4). In addition, it was also observed that the PSN layer covered the high current damage completely, suggesting that the ESD event occurred in between the capacitor top …

Mar 1, 2018 · High angular resolution EBSD is shown to be a sensitive technique to capture FIB-induced surface damage, and to demonstrate the effectiveness of the proposed method.

Overview about ESD damages caused by process robotics •MM- and CDM- based ESD-damages via pins (from wafer level to PCB) •Memory loss (from wafer to encapsulated device) •BS-ESD-induced cracking (die Pick&Place) •Reverse-bias leakage enhancement (mainly LEDs) •Obstructions in the process sequence by

Sep 1, 2018 · This paper is about FA on a 14 nm Fin-Field Effect Transistor (FinFET) device which has ESD failure after Charged Device Model (CDM) test. In most ESD failure FA, most of the time found Electrical Over Stress (EOS), the important is to understand which process layer or design causing the EOS.

use ESD defects on MIM capacitors even on the opposite side of the wafer. It has become clear that the control of the resistivity of the DI water exposed to the wafer is a critical parameter to avoid high electric fi.

Jul 1, 2005 · (a) The ESD-impact caused an intermetallic short (FIB-cross section). The cracks in passivation and interlevel dielectric have been filled with aluminum by extrusion (arrow). (b) ESDFOS can happen in two ways: either the handler/picker is …

Physical damage by ESD Inevitability of charging in FIB Global ESD prevention » Grounding » Protective coating In-via ESD prevention » Localized nature of FIB-induced charging