This hookup guide is not only limited to the MOSFET breakout board, here you can learn basics of MOSFET, so that you can build your own circuit in a breadboard/ Protoboard with components we are providing or use if you have some with you.

I would like to implement my own CMOS logic on a breadboard. I have already designed a simple PCB with basic logical functionality but now I'm stuck on the choice of N & P Type transistors (MOSFET, not BJT).

The objective of this lab activity is to build the various CMOS logic functions possible with the CD4007 transistor array. The CD4007 contains 3 complementary pairs of NMOS and PMOS transistors.

The purpose of this activity is to investigate the drain current I D vs. drain to source voltage V DS characteristic curves of an NMOS FET transistor.

Differential pair with tail current source breadboard circuit. Configure the oscilloscope instrument to capture several periods of the two signals being measured. An XY plot example is presented in Figure 7. Figure 7.

Figure 2. NMOS diode breadboard circuit. Procedure. Turn on the power supplies connected to the drain (V P = +5 V) and source (V N = –5 V) of the MOS transistor. Configure the oscilloscope instrument to capture several periods of the input signal (orange trace) and the output signal (purple trace). A plot example is presented in Figure 3.

The purpose of this activity is to investigate the forward and reverse current vs. voltage characteristics of a MOS field effect transistor (NMOS and PMOS) connected as a diode.

May 9, 2023 · Another problem caused by intermittent breadboard contacts. Solder the simple circuit. I have at the ends of resistor R3 about 12V. What does this mean? 12V across the resistor, or 12V on each side of the resistor?

The objective of this activity is to investigate the simple NMOS source follower amplifier, also sometimes referred to as the common drain configuration. The breadboard connections are shown in Figure 1 and Figure 2. The output of the waveform generator, W1, is connected to the gate terminal of M1.

The purpose of this lab is to characterize N and P type metal-oxide-semiconductor field-effect transistors (MOS-FETs), also known as NMOS and PMOS transistors. Figure 1 shows typical symbols for the NMOS and PMOS transistors. Depending on the applied DC bias, MOSFETs have three regions of operation: