Apr 22, 2020 · The resistive switching devices with endurance higher than 10 12 cycles have been reported in different types of RRAM cells involving tantalum oxide (TaO x)-based switching mediums [32, 36, 59]. Thus, tantalum oxide-based RRAM devices seem to be exhibiting the highest endurance.

Abstract: We provide an overview of metal oxide RRAM design challenges and opportunities in terms of endurance, retention and variability and the implications on the reliability and security of memory designs. We revise multiple level cell programming, endurance enhancing mechanisms, short-term memory opportunities and variability-aware design ...

To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 10 10 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features.

Mar 9, 2023 · Endurance. In RRAM, the endurance is defined as the number of set/reset cycles a memory device can undergo while maintaining a distinguishable resistance ratio between them.

Dec 6, 2024 · Resistive random-access memory (RRAM) is a type of non-volatile memory that can be used for neuromorphic computing. However, scaling of embedded RRAM to increase density and improve read...

Dec 1, 2016 · In this paper, we have demonstrated an oxygen-vacancy-based bipolar RRAM on a pure logic 14-nm-node HKMG FinFET platform. A unit cell of the memory consists of a control transistor (FinFET) and...

Resistive random-access memory (RRAM) is a type of non-volatile memory that can be used for neuromorphic computing. However, scaling of embedded RRAM to increase density and improve read...

May 7, 2019 · The parameters that determine the RRAM characteristics such as operating voltages, ON/OFF ratio, endurance, and data retention are improved by incorporating the three methods: 1) “interface engineering”, 2) element doping of functional materials, and 3) introduction of low-dimensional materials.

Abstract— In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are...

Apr 21, 2021 · Memristive devices including resistive random access memory (RRAM) cells are promising nanoscale low-power components projected to facilitate significant improvement in power and speed of Deep Learning (DL) accelerators, if structured in crossbar architectures.