To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 10 10 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features.

Apr 22, 2020 · Retention. The data retention of a RRAM device involves investigating stability over a period of time for both LRS and HRS after undergoing set and reset transitions.

Abstract: We provide an overview of metal oxide RRAM design challenges and opportunities in terms of endurance, retention and variability and the implications on the reliability and security of memory designs. We revise multiple level cell programming, endurance enhancing mechanisms, short-term memory opportunities and variability-aware design ...

Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

Mar 9, 2023 · The retention characteristics of the RRAM device for the seven resistance states (6 LRS, 1 HRS) at room temperature for over 10 \(^{4}\) s under different current limits are shown in Fig. 14c. The observations clearly depict the good data retention performance of the device.

May 7, 2019 · The parameters that determine the RRAM characteristics such as operating voltages, ON/OFF ratio, endurance, and data retention are improved by incorporating the three methods: 1) “interface engineering”, 2) element doping of functional materials, and 3) introduction of low-dimensional materials.

Dec 1, 2016 · In this paper, we have demonstrated an oxygen-vacancy-based bipolar RRAM on a pure logic 14-nm-node HKMG FinFET platform. A unit cell of the memory consists of a control transistor (FinFET) and a...

To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 1010 cycles or high 300°C retention. From first principle calculations, we...

Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization and need to be improved. In this work, we confirmed the trade-off between retention and endurance by using various top electrode thickness conditions.

Apr 21, 2021 · In this paper, we propose a novel generalized empirical metal-oxide RRAM endurance and retention model for use in large-scale DL simulations. To the best of our knowledge, the proposed model is the first to unify retention-endurance modeling while taking into account time, energy, SET-RESET cycles, device size, and temperature.