Jul 20, 2018 · We report a new method as UV treatment of low-temperature processed to obtain tin oxide (SnO2) electron transport layers (ETLs). The results show that the high quality of ETLs can be produced by controlling the thickness of the film while it is treated by UV.

These low temperature solution-processed and UV-sintered SnO 2 films are suitable for the low-cost, large yield solution process on a flexible substrate for optoelectronic devices.

SnO2: Ag/P–Si photodetectors demonstration the highest described visible responsivity of (0.287 A/W) with the Ag ratio of (0.03). I–V characteristics with different power density were measured.

Dec 4, 2023 · In this work, a WSe 2 /SnO 2 heterostructure is prepared by hydrothermal synthesis. The attachment of SnO 2 to flower-like WSe 2 nanosheets can generate gas transmission and n–n heterojunction, resulting in improved sensitivity and decreased response/recovery time.

May 27, 2024 · Self-powered heterojunction PDs having ultraviolet–visible–near-infrared broadband photoresponse were constructed by using SnO 2 nanopillars and CuInS 2 nanoflakes. The dimension, crystalline quality, and energy level structure of the SnO 2 nanopillars were regulated by changing the concentration of Sn ions in the precursor solution.

Sep 29, 2023 · In this work, we report an effective strategy for tuning the bandgap of SnO 2 thin films through the use of UVO treatment as an accessible postprocessing technique. The modifications achieved by UVO treatment were investigated by utilizing different structural, morphological, and optical studies.

The UV light-activated sensor fabricated from Au/SnO2 nanorods was found to exhibit excellent sensing properties for NO2 at room temperature, including a high response of 10 (at a concentration of 1 ppm), a theoretical detection limit of 21 ppt, and a fast response/recovery time of 1/5 s (${T}_{{60}}$ ) and 22/38 s (${T}_{{90}}$ ). In addition ...

Oct 1, 2024 · In this work, we present the growth of UV-transparent Ta-doped SnO 2 (TTO) thin films on GaN as a promising UV-transparent electrode for LEDs. TTO thin films with a thickness of 200 nm exhibit optical transmission exceeding 80% at the wavelength of 300 nm, with a low resistivity of 2.5 × 10 −4 Ω·cm and a low contact resistance of 1.7 × 10 ...

Jun 6, 2019 · Surface treatment of SnO 2, such as the UV–ozone (UVO) treatment, is shown to enhance the efficiency and reduce the light soaking effect of the PSCs.

We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO 2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C.

Aug 1, 2022 · The 2D/0D hetero-interface, which improves the charge transport under UV light has led to enhanced optoelectronic property and UV-activated NO 2 sensing performance. A promising method for the fabrication of room-temperature TMDs-based gas sensors with high performance has been shown in this study.

Mar 20, 2024 · Herein, we propose a room-temperature-processed tin oxide (SnO 2) ETL preparation method for flexible PQD solar cells. The process involves synthesizing highly crystalline SnO 2 nanocrystals...

UV-visible absorption spectra of the samples were shown in fig4. The absorption band at 370nm which originates from the band gap transitions and directs the existence of highly crystalline SnO2.

Jun 16, 2022 · The deduced staggered band alignment of SnO 2 /NiO favors the effective separation of photogenerated charge carriers when illuminated with UV light. Subsequently, the diodes were tested for UV photodetection. Remarkably, the …

Moreover, the SnO 2-NP-based photodetector showed a much stronger and more stable PEC signal in the UV region (300 nm and 334 nm), compared to that in the visible region (420 nm), indicating that it has great potential as a building block in UV photodetectors.

Dec 15, 2020 · UVO treatment was found to increase the amount of chemisorbed oxygen on the am-SnO2 surface, reducing the surface energy and contact angle. Physicochemical changes in the am-SnO 2 surface lowered the Gibbs free energy for the densification of perovskite films and facilitated the formation of homogeneous perovskite grains.

Herein, the SnO 2 nanosheet array (NSA) photoanodes are fabricated and their good self-powered UV detection capability is demonstrated. The 3D structure of SnO 2 NSA not only improves the interfacial charge transfer and carrier transport but also enhances UV absorption.

The UV-absorption edge gives a reliable estimate of the bandgap of any system. The sample's optical properties can be studied by finding the absorbance, transmittance, and bandgap of the sample.

The field-effect mobility of the UV/Ozone-assisted 300 °C-annealed SnO 2 thin film transistor (TFT) increases considerably (by ~500×), yielding a device with a field-effect mobility of 3.09 cm 2 /Vs.

Jul 12, 2013 · A high performance, stretchable UV sensor array was fabricated based on an active matrix (AM) device that combined field effect transistors of SWCNTs and SnO 2 nanowires. The AM devices provided spatial UV sensing via the individual sensors in the array.