The tungsten oxide (WO x) based RRAM device is improved by inserting a W-doped AlO x layer through via oxidation process. Compared with Al/TiN/WO x /W single switching layer devices, Al/W:AlO x /WO x /W bilayer devices have much better resistive switching performance.

The multi-level operation of WO x based RRAM has been investigated. Improvement of our WO x process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell.

Oct 15, 2022 · In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO X /ITO capacitor structure and incorporated DC-sputtered WO X as the switching layer between the two ITO electrodes.

Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in …

Mar 16, 2012 · The tungsten oxide (WOx) RRAM devices using 0.18μm CMOS process are designed, fabricated and characterized. The process flow is completely compatible with CMOS back-end-of-line process which is presented in this paper.

Sep 23, 2008 · The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory...

May 1, 2013 · In order to achieve high device density, a 1T1R RRAM structure is proposed, based on advantages of Al/W:AlOx/WOx/W devices. The structure shows better current compliance and narrower...

Feb 1, 2018 · In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WO x /p + -Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model.

The WO X layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WO X layer and result in a low initial resistance.

Sep 16, 2022 · In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO X /ITO capacitor structure and incorporated DC-sputtered WO X as the switching layer between the two ITO electrodes.