Nov 22, 2017 · Highly (001)-textured, photoactive WSe 2 thin films have been prepared by an amorphous solid-liquid-crystalline solid process promoted by palladium. By increasing the thickness of the Pd...

Jul 1, 2015 · WSe2—a layered semiconductor that can be exfoliated into atomically thin two-dimensional sheets—offers promising characteristics for application in solar energy conversion.

May 29, 2019 · Here we demonstrate a new method to grow inch-sized epitaxial WSe 2 films on SiO 2 /Si substrates at a much lower temperature with high repeatability and scalability. High quality crystalline...

Sep 1, 2022 · Here, we have studied and compared properties of thin crystalline WSe 2 films prepared via selenization of sputter-deposited sacrificial WO 3 and W films. Surface morphology of the as-grown films was studied using a scanning electron microscope complemented with an atomic force microscope.

Nov 29, 2021 · In this work, we report the growth of thin films of WSe 2 on highly ordered pyrolytic graphite (HOPG) substrates in UHV using tungsten hexacarbonyl [W (CO) 6] and elemental selenium as the sources for W and Se, respectively.

The present study focuses on fabricating WSe 2 thin films using radio frequency (RF) sputtering and their optical properties. These films were analyzed for their structural and optical properties using synchrotron-based Grazing Incidence X-ray Diffraction (GIXRD) and …

Jan 27, 2015 · Here, we demonstrate the first scalable synthesis of large-area, mono and few-layer WSe 2via metal–organic chemical vapor deposition using tungsten hexacarbonyl (W (CO) 6) and dimethylselenium ( (CH 3) 2 Se).

Jun 1, 2024 · In this study, we conduct a comprehensive analysis of crystal coverage (the proportion of the substrate covered with grown crystal) in WSe 2 thin film atomic force microscopy (AFM) micrographs using regression and segmentation models.

We report on thin film transistors using continuous WSe 2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O 2 plasma etching is used to provide precise thickness modification of the WSe 2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe 2 films.

Jan 7, 2022 · This paper reports thickness-dependent structural, morphological, optical, and electrical conduction mechanism of room temperature electron beam evaporated 2D WSe 2 thin films on glass substrate. The thickness of the WSe 2 films was varied from 100 to 400 nm.